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Title: Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth

This paper reports on the predicted increase in the Rashba interaction due to the incorporation of Bi in GaAs/AlGaAs heterostructures. Band structure parameters obtained from the band anti-crossing theory have been used in combination with self-consistent Schrödinger-Poisson calculations and k.p models to determine the electron spin-splitting caused by structural inversion asymmetry and increased spin-orbit interaction. A near linear seven fold increase in the strength of the Rashba interaction is predicted for a 10% concentration of Bi in a GaAsBi/AlGaAs quantum well heterostructure.
Authors:
; ; ;  [1]
  1. Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)
Publication Date:
OSTI Identifier:
22482209
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; ASYMMETRY; BISMUTH; GALLIUM ARSENIDES; INTERACTIONS; L-S COUPLING; QUANTUM WELLS; SPIN