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Title: Metallization and Hall-effect of Mg{sub 2}Ge under high pressure

The electrical transport properties of Mg{sub 2}Ge under high pressure were studied with the in situ temperature-dependent resistivity and Hall-effect measurements. The theoretically predicted metallization of Mg{sub 2}Ge was definitely found around 7.4 GPa by the temperature-dependent resistivity measurement. Other two pressure-induced structural phase transitions were also reflected by the measurements. Hall-effect measurement showed that the dominant charge carrier in the metallic Mg{sub 2}Ge was hole, indicating the “bad metal” nature of Mg{sub 2}Ge. The Hall mobility and charge carrier concentration results pointed out that the electrical transport behavior in the antifluorite phase was controlled by the increase quantity of drifting electrons under high pressure, but in both anticotunnite and Ni{sub 2}In-type phases it was governed by the Hall mobility.
Authors:
 [1] ;  [2] ;  [3] ;  [1] ;  [3] ; ; ; ; ;  [1] ;  [1] ;  [2] ;  [4]
  1. State Key Laboratory of Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012 (China)
  2. (China)
  3. (United States)
  4. Department of Mechanical Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)
Publication Date:
OSTI Identifier:
22482206
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHARGE CARRIERS; ELECTRON DRIFT; HALL EFFECT; METALS; MOBILITY; PHASE TRANSFORMATIONS; PRESSURE RANGE GIGA PA; PRESSURE RANGE MEGA PA 10-100; TEMPERATURE DEPENDENCE