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Title: Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films

We demonstrate broadband, low loss optical waveguiding in single crystalline GaN grown epitaxially on c-plane sapphire wafers through a buffered metal-organic chemical vapor phase deposition process. High Q optical microring resonators are realized in near infrared, infrared, and near visible regimes with intrinsic quality factors exceeding 50‚ÄČ000 at all the wavelengths we studied. TEM analysis of etched waveguide reveals growth and etch-induced defects. Reduction of these defects through improved material and device processing could lead to even lower optical losses and enable a wideband photonic platform based on GaN-on-sapphire material system.
Authors:
; ; ; ; ;  [1]
  1. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511 (United States)
Publication Date:
OSTI Identifier:
22482196
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTAL GROWTH; DEPOSITION; EPITAXY; GALLIUM NITRIDES; MONOCRYSTALS; ORGANOMETALLIC COMPOUNDS; PROCESSING; QUALITY FACTOR; RESONATORS; SAPPHIRE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; WAVEGUIDES; WAVELENGTHS