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Title: Enhanced polarization of (11–22) semi-polar InGaN nanorod array structure

By means of a cost effective nanosphere lithography technique, an InGaN/GaN multiple quantum well structure grown on (11–22) semipolar GaN has been fabricated into two dimensional nanorod arrays which form a photonic crystal (PhC) structure. Such a PhC structure demonstrates not only significantly increased emission intensity, but also an enhanced polarization ratio of the emission. This is due to an effective inhibition of the emission in slab modes and then redistribution to the vertical direction, thus minimizing the light scattering processes that lead to randomizing of the optical polarization. The PhC structure is designed based on a standard finite-difference-time-domain simulation, and then optically confirmed by detailed time-resolved photoluminescence measurements. The results presented pave the way for the fabrication of semipolar InGaN/GaN based emitters with both high efficiency and highly polarized emission.
Authors:
; ; ; ; ;  [1]
  1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)
Publication Date:
OSTI Identifier:
22482195
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTALS; DESIGN; EFFICIENCY; FABRICATION; GALLIUM NITRIDES; LIGHT SCATTERING; PHOTOLUMINESCENCE; POLARIZATION; QUANTUM WELLS; SIMULATION; TIME RESOLUTION; TWO-DIMENSIONAL SYSTEMS