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Title: Thermal management in MoS{sub 2} based integrated device using near-field radiation

Recently, wafer-scale growth of monolayer MoS{sub 2} films with spatial homogeneity is realized on SiO{sub 2} substrate. Together with the latest reported high mobility, MoS{sub 2} based integrated electronic devices are expected to be fabricated in the near future. Owing to the low lattice thermal conductivity in monolayer MoS{sub 2}, and the increased transistor density accompanied with the increased power density, heat dissipation will become a crucial issue for these integrated devices. In this letter, using the formalism of fluctuation electrodynamics, we explored the near-field radiative heat transfer from a monolayer MoS{sub 2} to graphene. We demonstrate that in resonance, the maximum heat transfer via near-field radiation between MoS{sub 2} and graphene can be ten times higher than the in-plane lattice thermal conduction for MoS{sub 2} sheet. Therefore, an efficient thermal management strategy for MoS{sub 2} integrated device is proposed: Graphene sheet is brought into close proximity, 10–20 nm from MoS{sub 2} device; heat energy transfer from MoS{sub 2} to graphene via near-field radiation; this amount of heat energy then be conducted to contact due to ultra-high lattice thermal conductivity of graphene. Our work sheds light for developing cooling strategy for nano devices constructing with low thermal conductivity materials.
Authors:
 [1] ;  [2] ;  [3]
  1. Department of Physics, National University of Singapore, Singapore 117546 (Singapore)
  2. Institute of High Performance Computing, A*STAR, Singapore 138632 (Singapore)
  3. Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States)
Publication Date:
OSTI Identifier:
22482179
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRODYNAMICS; ELECTRONIC EQUIPMENT; ENERGY LOSSES; FILMS; GRAPHENE; MOBILITY; MOLYBDENUM SULFIDES; POWER DENSITY; SILICON OXIDES; SUBSTRATES; THERMAL CONDUCTION; THERMAL CONDUCTIVITY; THERMAL DIFFUSIVITY; THERMAL EFFLUENTS; TRANSISTORS