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Title: Al and Ge simultaneous oxidation using neutral beam post-oxidation for formation of gate stack structures

To obtain a high-quality Germanium (Ge) metal–oxide–semiconductor structure, a Ge gate stacked structure was fabricated using neutral beam post-oxidation. After deposition of a 1-nm-thick Al metal film on a Ge substrate, simultaneous oxidation of Al and Ge was carried out at 300 °C, and a Ge oxide film with 29% GeO{sub 2} content was obtained by controlling the acceleration bias power of the neutral oxygen beam. In addition, the fabricated AlO{sub x}/GeO{sub x}/Ge structure achieved a low interface state density of less than 1 × 10{sup 11 }cm{sup −2 }eV{sup −1} near the midgap.
Authors:
 [1] ;  [2] ;  [3] ;  [1] ;  [4]
  1. WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)
  2. (JST), PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan)
  3. Institute of Fluid Science (IFS), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)
  4. (IFS), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)
Publication Date:
OSTI Identifier:
22482178
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BEAMS; DEPOSITION; FILMS; GERMANATES; GERMANIUM; GERMANIUM OXIDES; INTERFACES; OXIDATION; OXYGEN; SEMICONDUCTOR MATERIALS; SUBSTRATES