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Title: Transfer-free synthesis of highly ordered Ge nanowire arrays on glass substrates

Vertically aligned Ge nanowires (NWs) are directly synthesized on glass via vapor-liquid-solid (VLS) growth using chemical-vapor deposition. The use of the (111)-oriented Ge seed layer, formed by metal-induced crystallization at 325 °C, dramatically improved the density, uniformity, and crystal quality of Ge NWs. In particular, the VLS growth at 400 °C allowed us to simultaneously achieve the ordered morphology and high crystal quality of the Ge NW array. Transmission electron microscopy demonstrated that the resulting Ge NWs had no dislocations or stacking faults. Production of high-quality NW arrays on amorphous insulators will promote the widespread application of nanoscale devices.
Authors:
; ;  [1] ; ;  [2] ; ;  [3]
  1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)
  2. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)
  3. Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)
Publication Date:
OSTI Identifier:
22482175
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; CRYSTALS; DENSITY; DISLOCATIONS; GLASS; NANOWIRES; STACKING FAULTS; SUBSTRATES; SYNTHESIS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS