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Title: Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy

Thin films of the wide bandgap quaternary semiconductor In{sub x}Al{sub y}Ga{sub (1−x−y)}N with low In (x = 0.01–0.05) and high Al composition (y = 0.40–0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280 nm–320 nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation.
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [4] ;  [2] ;  [5]
  1. Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)
  2. Charles Bowden Laboratory, Army Aviation and Missile RD&E Center, Redstone Arsenal, Alabama 35898 (United States)
  3. Department of Geoscience, University of Wisconsin, Madison, Wisconsin 53706 (United States)
  4. CNR-NANOTEC, Istituto di Nanotecnologia, via Orabona, 4-70126 Bari (Italy)
  5. (United States)
Publication Date:
OSTI Identifier:
22482167
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; DISLOCATIONS; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA; RECOMBINATION; RELAXATION; RESOLUTION; SEMICONDUCTOR MATERIALS; STRAINS; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ULTRAVIOLET RADIATION; X-RAY DIFFRACTION