skip to main content

Title: Controlling the directionality of spontaneous emission by evanescent wave coupling

We report an approach toward controlling the directionality of spontaneous emissions by employing the evanescent wave coupling effect in a subwavelength-sized ridge or truncated cone structure. An InGaAs/GaAs light-emitting diode in which a stripe-shaped InGaAs/GaAs quantum well with a stripe width of about 100 nm is embedded at the center of a subwavelength-sized GaAs ridge (of width ∼520 nm) is fabricated by micro processing and epitaxial regrowth techniques. Strong directionalities characterized by a half-intensity angle of 43° are observed in planes perpendicular to the ridge axis. The directionality is found to be almost independent of operating conditions.
Authors:
; ;  [1]
  1. Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba 305-8568 (Japan)
Publication Date:
OSTI Identifier:
22482160
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONES; COUPLING; EMISSION; EPITAXY; GALLIUM ARSENIDES; INDIUM ARSENIDES; LIGHT EMITTING DIODES; PROCESSING; QUANTUM WELLS; WIDTH