Multicolor and near-infrared electroluminescence from the light-emitting devices with rare-earth doped TiO{sub 2} films
- State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
We report on multicolor and near-infrared electroluminescence (EL) from the devices using rare-earth doped TiO{sub 2} (TiO{sub 2}:RE) films as light-emitting layers, which are ascribed to the impact excitation of RE{sup 3+} ions, with the EL onset voltages below 10 V. The devices are in the structure of ITO/TiO{sub 2}:RE/SiO{sub 2}/Si, in which the SiO{sub 2} layer is ∼10 nm thick and RE includes Eu, Er, Tm, Nd, and so on. With sufficiently high positive voltage applied on the ITO electrode, the conduction electrons in Si can tunnel into the conduction band of SiO{sub 2} layer via the trap-assisted tunneling mechanism, gaining the potential energy ∼4 eV higher than the conduction band edge of TiO{sub 2}. Therefore, as the electrons in the SiO{sub 2} layer drift into the TiO{sub 2}:RE layer, they become hot electrons. Such hot electrons impact-excite the RE{sup 3+} ions incorporated into the TiO{sub 2} host, leading to the characteristic emissions.
- OSTI ID:
- 22482155
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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