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Title: Electron mobility enhancement in (100) oxygen-inserted silicon channel

High performance improvement (+88% in peak G{sub m} and >30% in linear and saturation region drain currents) was observed for N-MOSFETs with Oxygen-Inserted (OI) Si channel. From TCAD analysis of the C-V measurement data, the improvement was confirmed to be due to electron mobility enhancement of the OI Si channel (+75% at N{sub inv} = 4.0 × 10{sup 12} cm{sup −2} and +25% at N{sub inv} = 8.0 × 10{sup 12} cm{sup −2}). Raman and high-resolution Rutherford backscattering measurements confirmed that negligible strain is induced in the OI Si layer, and hence, it cannot be used to explain the origin of mobility improvement. Poisson-Schrödinger based quantum mechanical simulation was performed, taking into account phonon, surface roughness and Coulomb scatterings. The OI layer was modeled as a “quasi barrier” region with reference to the Si conduction band edge to confine inversion electrons. Simulation explains the measured electron mobility enhancement as the confinement effect of inversion electrons while the formation of an super-steep retrograde well doping profile in the channel (as a result of dopant diffusion blocking effect accompanied by introduction of the OI layer) also contributes 50%–60% of the mobility improvement.
Authors:
;  [1] ; ; ; ; ;  [2] ; ;  [3]
  1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)
  2. Mears Technologies, Inc., Wellesley Hills, Massachusetts 02481 (United States)
  3. SK Hynix, Icheon-si, Gyeonggi-do 467-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22482148
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COULOMB SCATTERING; ELECTRON MOBILITY; LAYERS; MOSFET; OXYGEN; PERFORMANCE; QUANTUM MECHANICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SIMULATION; SURFACES