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Title: A WSe{sub 2}/MoSe{sub 2} heterostructure photovoltaic device

We report on the photovoltaic effect in a WSe{sub 2}/MoSe{sub 2} heterojunction, demonstrating gate tunable current rectification with on/off ratios of over 10{sup 4}. Spatially resolved photocurrent maps show the photovoltaic effect to originate from the entire overlap region. Compared to WSe{sub 2}/MoS{sub 2} heterostructures, our devices perform better at long wavelengths and yield higher quantum efficiencies, in agreement with Shockley-Queisser theory.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. Photonics Laboratory, ETH Zürich, Zürich 8092 (Switzerland)
  2. National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)
Publication Date:
OSTI Identifier:
22482142
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPARATIVE EVALUATIONS; CURRENTS; HETEROJUNCTIONS; MOLYBDENUM SELENIDES; MOLYBDENUM SULFIDES; PHOTOVOLTAIC EFFECT; QUANTUM EFFICIENCY; WAVELENGTHS