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Title: MoS{sub 2} oxygen sensor with gate voltage stress induced performance enhancement

Two-dimensional (2D) materials have recently attracted wide attention and rapidly established themselves in various applications. In particular, 2D materials are regarded as promising building blocks for gas sensors due to their high surface-to-volume ratio, ease in miniaturization, and flexibility in enabling wearable electronics. Compared with other 2D materials, MoS{sub 2} is particularly intriguing because it has been widely researched and exhibits semiconducting behavior. Here, we have fabricated MoS{sub 2} resistor based O{sub 2} sensors with a back gate configuration on a 285 nm SiO{sub 2}/Si substrate. The effects of applying back gate voltage stress on O{sub 2} sensing performance have been systematically investigated. With a positive gate voltage stress, the sensor response improves and the response is improved to 29.2% at O{sub 2} partial pressure of 9.9 × 10{sup −5} millibars with a +40 V back-gate bias compared to 21.2% at O{sub 2} partial pressure of 1.4 × 10{sup −4} millibars without back-gate bias; while under a negative gate voltage stress of −40 V, a fast and full recovery can be achieved at room temperature. In addition, a method in determining O{sub 2} partial pressure with a detectability as low as 6.7 × 10{sup −7} millibars at a constant vacuum pressure is presented and its potential as a vacuum gaugemore » is briefly discussed.« less
Authors:
; ; ; ;  [1]
  1. Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 (Singapore)
Publication Date:
OSTI Identifier:
22482141
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPARATIVE EVALUATIONS; ELECTRIC POTENTIAL; FLEXIBILITY; MATERIALS; MINIATURIZATION; MOLYBDENUM SULFIDES; OXYGEN; PARTIAL PRESSURE; RESISTORS; SENSORS; SILICON OXIDES; STRESSES; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K; TWO-DIMENSIONAL SYSTEMS; VACUUM GAGES