Junction size dependence of ferroelectric properties in e-beam patterned BaTiO{sub 3} ferroelectric tunnel junctions
- Center for Materials for Information Technology, The University of Alabama, Tuscaloosa, Alabama 35487 (United States)
- Thin Films and Physics of Nanostructures, Department of Physics and Center for Spinelectronic Materials and Devices, Bielefeld University, Bielefeld 33615 (Germany)
We investigate the switching characteristics in BaTiO{sub 3}-based ferroelectric tunnel junctions patterned in a capacitive geometry with circular Ru top electrode with diameters ranging from ∼430 to 2300 nm. Two different patterning schemes, viz., lift-off and ion-milling, have been employed to examine the variations in the ferroelectric polarization, switching, and tunnel electro-resistance resulting from differences in the pattering processes. The values of polarization switching field are measured and compared for junctions of different diameter in the samples fabricated using both patterning schemes. We do not find any specific dependence of polarization switching bias on the size of junctions in both sample stacks. The junctions in the ion-milled sample show up to three orders of resistance change by polarization switching and the polarization retention is found to improve with increasing junction diameter. However, similar switching is absent in the lift-off sample, highlighting the effect of patterning scheme on the polarization retention.
- OSTI ID:
- 22482137
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electronic band alignment and electron transport in Cr/BaTiO{sub 3}/Pt ferroelectric tunnel junctions
Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} heterostructure