The influence of interlayer exchange coupling in giant-magnetoresistive devices on spin diode effect in wide frequency range

Journal Article · Mon Sep 21 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4931771· OSTI ID:22482133

Ziętek, Sławomir; Skowroński, Witold; Wiśniowski, Piotr; Czapkiewicz, Maciej; Stobiecki, Tomasz ^[1]; Ogrodnik, Piotr ^[1]; Barnaś, Józef ^[2]

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1. Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Kraków (Poland)
2. Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań (Poland)

Spin diode effect in a giant magnetoresistive strip is measured in a broad frequency range, including resonance and off-resonance frequencies. The off-resonance dc signal is relatively strong and also significantly dependent on the exchange coupling between magnetic films through the spacer layer. The measured dc signal is described theoretically by taking into account magnetic dynamics induced by Oersted field created by an ac current flowing through the system.

• OSTI ID: 22482133
• Journal Information: Applied Physics Letters, Vol. 107, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COUPLING
FILMS
FREQUENCY RANGE
LAYERS
MAGNETORESISTANCE
SIGNALS
SPIN