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Title: Electrical control of Co/Ni magnetism adjacent to gate oxides with low oxygen ion mobility

We investigate the electrical manipulation of Co/Ni magnetization through a combination of ionic liquid and oxide gating, where HfO{sub 2} with a low O{sup 2−} ion mobility is employed. A limited oxidation-reduction process at the metal/HfO{sub 2} interface can be induced by large electric field, which can greatly affect the saturated magnetization and Curie temperature of Co/Ni bilayer. Besides the oxidation/reduction process, first-principles calculations show that the variation of d electrons is also responsible for the magnetization variation. Our work discloses the role of gate oxides with a relatively low O{sup 2−} ion mobility in electrical control of magnetism, and might pave the way for the magneto-ionic memory with low power consumption and high endurance performance.
Authors:
; ; ; ; ; ; ;  [1]
  1. Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)
Publication Date:
OSTI Identifier:
22482131
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONTROL; CURIE POINT; ELECTRIC FIELDS; HAFNIUM OXIDES; INTERFACES; ION MOBILITY; LAYERS; LIQUIDS; MAGNETISM; MAGNETIZATION; METALS; OXIDATION; OXYGEN IONS; PERFORMANCE; REDUCTION; VARIATIONS