Spin relaxation characteristics in Ag nanowire covered with various oxides
- Center of Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198 (Japan)
We have studied spin relaxation characteristics in a Ag nanowire covered with various oxide layers of Bi{sub 2}O{sub 3}, Al{sub 2}O{sub 3}, HfO{sub 2}, MgO, or AgO{sub x} by using non-local spin valve structures. The spin-flip probability, a ratio of momentum relaxation time to spin relaxation time at 10 K, exhibits a gradual increase with an atomic number of the oxide constituent elements, Mg, Al, Ag, and Hf. Surprisingly, the Bi{sub 2}O{sub 3} capping was found to increase the probability by an order of magnitude compared with other oxide layers. This finding suggests the presence of an additional spin relaxation mechanism such as Rashba effect at the Ag/Bi{sub 2}O{sub 3} interface, which cannot be explained by the simple Elliott-Yafet mechanism via phonon, impurity, and surface scatterings. The Ag/Bi{sub 2}O{sub 3} interface may provide functionality as a spin to charge interconversion layer.
- OSTI ID:
- 22482130
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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