Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

Journal Article · Mon Sep 21 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4931624· OSTI ID:22482121

Ngo, Thi Huong; Gil, Bernard; Valvin, Pierre ^[1]; Damilano, Benjamin; Lekhal, Kaddour; De Mierry, Philippe ^[2]

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1. Laboratoire Charles Coulomb – UMR 5221, CNRS and University Montpellier, Case courier 074, 34095 Montpellier Cedex 5 (France)
2. CRHEA-CNRS Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, rue Bernard Gregory, 06560 Valbonne (France)

We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Iwata et al. [J. Appl. Phys. 117, 075701 (2015)]. Our results indicate that low temperature internal quantum efficiencies sit in the 50% range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57% with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5% up to 4.3% at room temperature.

• OSTI ID: 22482121
• Journal Information: Applied Physics Letters, Vol. 107, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
AMBER
GALLIUM NITRIDES
LAYERS
PHOTOLUMINESCENCE
QUANTUM EFFICIENCY
STRAINS
VISIBLE RADIATION