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Title: Probing carrier dynamics of individual layers in a heterostructure using transient reflectivity

We report the wavelength dependent transient reflectivity measurements in AlGaAs-GaAs heterostructures having two-dimensional electron (or hole) gas near the interface. Using a multilayer model for transient reflectivity, we show that the magnitude and sign of contributions from the carriers in two-dimensional electron (or hole) gas and GaAs to the total signal depends on the wavelength. Further, it has been shown that it is possible to study the carrier dynamics in a given layer of a heterostructure by performing transient reflectivity at specific wavelengths.
Authors:
; ; ; ;  [1]
  1. Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)
Publication Date:
OSTI Identifier:
22482120
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; CARRIERS; GALLIUM ARSENIDES; INTERFACES; LAYERS; REFLECTIVITY; SIGNALS; WAVELENGTHS