Probing carrier dynamics of individual layers in a heterostructure using transient reflectivity
- Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)
We report the wavelength dependent transient reflectivity measurements in AlGaAs-GaAs heterostructures having two-dimensional electron (or hole) gas near the interface. Using a multilayer model for transient reflectivity, we show that the magnitude and sign of contributions from the carriers in two-dimensional electron (or hole) gas and GaAs to the total signal depends on the wavelength. Further, it has been shown that it is possible to study the carrier dynamics in a given layer of a heterostructure by performing transient reflectivity at specific wavelengths.
- OSTI ID:
- 22482120
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Transient Studies of Nonequilibrium Transport in Two-Dimensional Semiconductors
Effects of electron beam irradiation on transient photoluminescence measurements of GaAs and AlGaAs double heterostructures
Coherent spin dynamics of carriers in ferromagnetic semiconductor heterostructures with an Mn δ layer
Technical Report
·
Tue Oct 27 00:00:00 EDT 2020
·
OSTI ID:22482120
Effects of electron beam irradiation on transient photoluminescence measurements of GaAs and AlGaAs double heterostructures
Journal Article
·
Fri Dec 01 00:00:00 EST 1995
· IEEE Transactions on Nuclear Science
·
OSTI ID:22482120
Coherent spin dynamics of carriers in ferromagnetic semiconductor heterostructures with an Mn δ layer
Journal Article
·
Thu Sep 15 00:00:00 EDT 2016
· Journal of Experimental and Theoretical Physics
·
OSTI ID:22482120
+4 more