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Title: Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction Al{sub x}Ga{sub 1–x}N multiple quantum wells grown by metalorganic vapor phase epitaxy

Appropriate-amount Si-doping in the well layers significantly improved the luminescence efficiency of Al{sub 0.68}Ga{sub 0.32}N/Al{sub 0.77}Ga{sub 0.23}N multiple quantum wells. To understand the mechanisms, spatio-time-resolved cathodoluminescence measurements and self-consistent Schrödinger-Poisson calculations were carried out. The increase in the luminescence lifetime at room temperature, which reflects the decrease in the concentration of nonradiative recombination centers (NRCs), was correlated with increased terrace width of Si-doped wells. The results suggest the importance of H{sub 3}SiNH{sub 2} doping-reactant formation that gives rise to enhanced decomposition of NH{sub 3} and provides wetting conditions by surface Si-N bonds, which reduce the total energy and concentration of NRCs composed of cation vacancies.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan)
  2. Graduate School of Regional Innovation Studies, Mie University, Tsu 514-8507 (Japan)
  3. Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507 (Japan)
Publication Date:
OSTI Identifier:
22482115
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; ALUMINIUM NITRIDES; AMMONIA; CATHODOLUMINESCENCE; CATIONS; DECOMPOSITION; DOPED MATERIALS; EFFICIENCY; LAYERS; LIFETIME; QUANTUM WELLS; RECOMBINATION; TEMPERATURE RANGE 0273-0400 K; TIME RESOLUTION; VACANCIES; VAPOR PHASE EPITAXY