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Title: A thorough investigation of the progressive reset dynamics in HfO{sub 2}-based resistive switching structures

According to previous reports, filamentary electron transport in resistive switching HfO{sub 2}-based metal-insulator-metal structures can be modeled using a diode-like conduction mechanism with a series resistance. Taking the appropriate limits, the model allows simulating the high (HRS) and low (LRS) resistance states of the devices in terms of exponential and linear current-voltage relationships, respectively. In this letter, we show that this simple equivalent circuit approach can be extended to represent the progressive reset transition between the LRS and HRS if a generalized logistic growth model for the pre-exponential diode current factor is considered. In this regard, it is demonstrated here that a Verhulst logistic model does not provide accurate results. The reset dynamics is interpreted as the sequential deactivation of multiple conduction channels spanning the dielectric film. Fitting results for the current-voltage characteristics indicate that the voltage sweep rate only affects the deactivation rate of the filaments without altering the main features of the switching dynamics.
Authors:
; ;  [1] ; ;  [2]
  1. Dipartimento di Ingegneria dell'Informazione, Elettronica e Telecomunicazioni, Università di Roma “Sapienza,” 00184 Rome (Italy)
  2. Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra (Spain)
Publication Date:
OSTI Identifier:
22482102
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CURRENTS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; EQUIVALENT CIRCUITS; FILAMENTS; FILMS; HAFNIUM OXIDES; METALS