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Title: Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

We report the metal organic chemical vapor deposition growth of dislocation-free 100 nm thick hexagonal InGaN nanopyramid arrays with up to 33% of indium content by nano-selective area growth on patterned AlN/Si (111) substrates. InGaN grown on SiO{sub 2} patterned templates exhibit high selectivity. Their single crystal structure is confirmed by scanning transmission electron microscope combined with an energy dispersive X-ray analysis, which also reveals the absence of threading dislocations in the InGaN nanopyramids due to elastic strain relaxation mechanisms. Cathodoluminescence measurements on a single InGaN nanopyramid clearly show an improvement of the optical properties when compared to planar InGaN grown under the same conditions. The good structural, morphological, and optical quality of the InGaN nanostructures grown on AlN/Si indicates that the nano-selective area growth technology is attractive for the realization of site-controlled indium-rich InGaN nanostructure-based devices and can also be transferred to other highly mismatched substrates.
Authors:
;  [1] ; ; ; ; ;  [1] ;  [2] ; ;  [3] ;  [4]
  1. CNRS, UMI 2958 Georgia Tech-CNRS, 2 Rue Marconi, 57070 Metz (France)
  2. (France)
  3. CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis (France)
  4. Universite de Lorraine, Centrale Supelec, LMOPS, EA 4423, 2 rue E. Belin, 57070 Metz (France)
Publication Date:
OSTI Identifier:
22482094
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM NITRIDES; CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS; INDIUM; MONOCRYSTALS; NANOSTRUCTURES; OPTICAL PROPERTIES; ORGANOMETALLIC COMPOUNDS; RELAXATION; SILICA; SILICON OXIDES; STRAINS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION