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Title: Observation of reduced 1/f noise in graphene field effect transistors on boron nitride substrates

We have investigated the low frequency (f) flicker (also called 1/f) noise of single-layer graphene devices on h-BN (placed on SiO{sub 2}/Si) along with those on SiO{sub 2}/Si. We observe that the devices fabricated on h-BN have on average one order of magnitude lower noise amplitude compared with devices fabricated on SiO{sub 2}/Si despite having comparable mobilities at room temperature. We associate this noise reduction to the lower densities of impurities and trap sites in h-BN than in SiO{sub 2}. Furthermore, the gate voltage dependent noise amplitude shows a broad maximum at Dirac point for devices on h-BN, in contrast to the M-shaped behavior showing a minimum at Dirac point for devices on SiO{sub 2}, consistent with the reduced charge inhomogeneity (puddles) for graphene on h-BN. This study demonstrates that the use of h-BN as a substrate or dielectric can be a simple and efficient noise reduction technique valuable for electronic applications of graphene and other nanomaterials.
Authors:
 [1] ;  [2] ;  [1] ;  [2] ;  [2]
  1. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22482092
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMPLITUDES; BORON NITRIDES; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; GRAPHENE; IMPURITIES; MOBILITY; NANOMATERIALS; NOISE; SILICON OXIDES; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TRAPS