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Title: Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm

We demonstrate passive mode locking of a GaSb-based diode laser emitting at 2.1 μm. The active region of the studied device consists in two 10-nm-thick GaInSbAs/GaAlSbAs quantum wells. Passive mode locking has been achieved in a two-section laser with one of the sections used as a saturable absorber. A microwave signal at 20.6 GHz, measured in the electrical circuit of the absorber, corresponds to the fundamental photon round-trip frequency in the laser resonator. The linewidth of this signal as low as ∼10 kHz has been observed at certain operating conditions, indicating low phase noise mode-locked operation.
Authors:
; ;  [1] ; ;  [2] ;  [3]
  1. CNRS, Laboratory for Photonics and Nanostructures, Route de Nozay, 91460 Marcoussis (France)
  2. Institute of Electronics and Systems, CNRS UMR 5214, University of Montpellier, 34095 Montpellier (France)
  3. Ioffe Institute, 194021 Saint Petersburg (Russian Federation)
Publication Date:
OSTI Identifier:
22482070
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; GALLIUM ANTIMONIDES; GHZ RANGE 01-100; KHZ RANGE 01-100; LASERS; MICROWAVE RADIATION; MODE LOCKING; NOISE; OPERATION; PHOTONS; QUANTUM WELLS; RESONATORS; SIGNALS