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Title: Large area InN terahertz emitters based on the lateral photo-Dember effect

Large area terahertz emitters based on the lateral photo-Dember effect in InN (indium nitride) are presented. The formation of lateral photo-Dember currents is induced by laser-illumination through a microstructured metal cover processed onto the InN substrate, causing an asymmetry in the lateral photogenerated charge carrier distribution. Our design uses simple metal structures, which are produced by conventional two-dimensional micro-structuring techniques. Having favoring properties as a photo-Dember material InN is particularly well-suited as a substrate for our emitters. We demonstrate that the emission intensity of the emitters can be significantly influenced by the structure of the metal cover leaving room for improvement by optimizing the masking structures.
Authors:
; ;  [1] ;  [2] ; ; ; ;  [3]
  1. Department of Molecular and Optical Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany)
  2. (Germany)
  3. Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastr. 72, 79108 Freiburg (Germany)
Publication Date:
OSTI Identifier:
22482064
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ASYMMETRY; CHARGE CARRIERS; DEMBER EFFECT; INDIUM; INDIUM NITRIDES; LASERS; MASKING; MICROSTRUCTURE; OPTIMIZATION; SUBSTRATES