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Title: Polycrystalline VO{sub 2} film characterization by quantum capacitance measurement

Capacitance measurement is performed using a home-built bridge on quasi two-dimensional vanadium dioxide films grown on silicon-dioxide/p-doped silicon substrates. Correlated effects appearing in the quantum capacitance are obtained as a function of temperature at low frequencies. The thermodynamic density of states reveals the opening band gap in the insulating monoclinic phase.
Authors:
; ; ;  [1] ; ; ;  [2]
  1. Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201 (United States)
  2. Electrical and Computer Engineering Department, Michigan State University, East Lansing, Michigan 48824 (United States)
Publication Date:
OSTI Identifier:
22482061
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPACITANCE; DENSITY OF STATES; DOPED MATERIALS; FILMS; MONOCLINIC LATTICES; POLYCRYSTALS; SILICON; SILICON OXIDES; SUBSTRATES; TEMPERATURE DEPENDENCE; VANADIUM OXIDES