Polycrystalline VO{sub 2} film characterization by quantum capacitance measurement

Journal Article · Mon Sep 07 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4930312· OSTI ID:22482061

Wu, Zhe; Knighton, Talbot; Tarquini, Vinicio; Huang, Jian ^[1]; Torres, David; Wang, Tongyu; Sepúlveda, Nelson ^[2]

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1. Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201 (United States)
2. Electrical and Computer Engineering Department, Michigan State University, East Lansing, Michigan 48824 (United States)

Capacitance measurement is performed using a home-built bridge on quasi two-dimensional vanadium dioxide films grown on silicon-dioxide/p-doped silicon substrates. Correlated effects appearing in the quantum capacitance are obtained as a function of temperature at low frequencies. The thermodynamic density of states reveals the opening band gap in the insulating monoclinic phase.

• OSTI ID: 22482061
• Journal Information: Applied Physics Letters, Vol. 107, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CAPACITANCE
DENSITY OF STATES
DOPED MATERIALS
FILMS
MONOCLINIC LATTICES
POLYCRYSTALS
SILICON
SILICON OXIDES
SUBSTRATES
TEMPERATURE DEPENDENCE
VANADIUM OXIDES