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Title: Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.
Authors:
; ;  [1] ;  [1] ;  [2] ; ;  [3] ;  [3] ;  [2]
  1. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
  2. (United Kingdom)
  3. School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom)
Publication Date:
OSTI Identifier:
22482048
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 10; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BORON NITRIDES; ELECTRODES; GHZ RANGE; GRAPHENE; IMPEDANCE; OSCILLATIONS; OSCILLATORS; SIMULATION; TIME DEPENDENCE; TUNNEL DIODES