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Title: Gate-controlled terahertz single electron photovoltaic effect in self-assembled InAs quantum dots

We have observed a terahertz (THz) induced single electron photovoltaic effect in self-assembled InAs quantum dots (QDs). We used a single electron transistor (SET) geometry that consists of a single InAs QD and nanogap electrodes coupled with a bowtie antenna. Under a weak, broadband THz radiation, a photocurrent induced by THz intersublevel transitions in the QD is generated even when no bias voltage is applied to the SET. The observed single electron photovoltaic effect is due to an energy-dependent tunneling asymmetry in the QD-SET. Moreover, the tunneling asymmetry changes not only with the shell but also with the electron number in the QD, suggesting the manybody nature of the electron wavefunctions. The THz photovoltaic effect observed in the present QD-SET system may have potential applications to nanoscale energy harvesting.
Authors:
;  [1] ; ;  [1] ;  [2] ; ;  [1] ;  [3]
  1. Center for Photonics Electronics Convergence, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
  2. (Japan)
  3. (France)
Publication Date:
OSTI Identifier:
22482046
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANTENNAS; ASYMMETRY; ELECTRODES; ELECTRONS; ENERGY DEPENDENCE; GEOMETRY; INDIUM ARSENIDES; PHOTOVOLTAIC EFFECT; QUANTUM DOTS; TRANSISTORS; TUNNEL EFFECT; WAVE FUNCTIONS