Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

Journal Article · Mon Sep 07 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4930833· OSTI ID:22482043

Shim, Seong Hoon ^[1]; Kim, Hyung-jun ^[1]; Koo, Hyun Cheol ^[1]; Lee, Yun-Hi ^[2]; Chang, Joonyeon ^[1]

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1. Center for Spintronics, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
2. Department of Physics, Korea University, Seoul 136-713 (Korea, Republic of)

We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3 mV at 10 K and 0.8 mV even at 400 K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77 μm, respectively, at 200 K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.

• OSTI ID: 22482043
• Journal Information: Applied Physics Letters, Vol. 107, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRYSTALS
DIFFUSION LENGTH
DOPED MATERIALS
GALLIUM ARSENIDES
INTERFACES
MAGNESIUM OXIDES
MODULATION
MOLECULAR BEAM EPITAXY
SPIN