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Title: Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3 mV at 10 K and 0.8 mV even at 400 K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77 μm, respectively, at 200 K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.
Authors:
 [1] ;  [2] ;  [1] ;  [1] ;  [2] ;  [3] ;  [1] ;  [2]
  1. Center for Spintronics, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
  2. (Korea, Republic of)
  3. Department of Physics, Korea University, Seoul 136-713 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22482043
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTALS; DIFFUSION LENGTH; DOPED MATERIALS; GALLIUM ARSENIDES; INTERFACES; MAGNESIUM OXIDES; MODULATION; MOLECULAR BEAM EPITAXY; SPIN