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Title: Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.
Authors:
; ; ;  [1] ;  [2] ;  [2] ;  [3] ;  [4]
  1. Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble (France)
  2. (France)
  3. Crocus-Technology, 5, Place Robert Schuman, F-38054 Grenoble (France)
  4. Univ. Grenoble Alpes, INAC-SP2M, F-38000 Grenoble, France and CEA, INAC-SP2M, F-38000 Grenoble (France)
Publication Date:
OSTI Identifier:
22482042
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALIGNMENT; AMPLITUDES; DEGREES OF FREEDOM; DESIGN; EFFICIENCY; ELECTRODES; MAGNETIZATION; MODULATION; RANDOMNESS; SPIN; SPIN ORIENTATION; TORQUE; TUNNEL EFFECT