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Title: Determining the band alignment of TbAs:GaAs and TbAs:In{sub 0.53}Ga{sub 0.47}As

We propose and systematically justify a band structure for TbAs nanoparticles in GaAs and In{sub 0.53}Ga{sub 0.47}As host matrices. Fluence-dependent optical-pump terahertz-probe measurements suggest the TbAs nanoparticles have a band gap and provide information on the carrier dynamics, which are determined by the band alignment. Spectrophotometry measurements provide the energy of optical transitions in the nanocomposite systems and reveal a large blue shift in the absorption energy when the host matrix is changed from In{sub 0.53}Ga{sub 0.47}As to GaAs. Finally, Hall data provides the approximate Fermi level in each system. From this data, we deduce that the TbAs:GaAs system forms a type I (straddling) heterojunction and the TbAs:In{sub 0.53}Ga{sub 0.47}As system forms a type II (staggered) heterojunction.
Authors:
; ;  [1] ;  [2] ;  [3] ; ; ;  [4] ;  [1] ;  [5]
  1. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716 (United States)
  2. Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716 (United States)
  3. Physics and Technology Department, Edinboro University of Pennsylvania, Edinboro, Pennsylvania 16444 (United States)
  4. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  5. (United States)
Publication Date:
OSTI Identifier:
22482035
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; APPROXIMATIONS; CARRIERS; FERMI LEVEL; GALLIUM ARSENIDES; HETEROJUNCTIONS; INFORMATION; NANOPARTICLES; SPECTROPHOTOMETRY