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Title: Spectroscopic investigations of band offsets of MgO|Al{sub x}Ga{sub 1-x}N epitaxial heterostructures with varying AlN content

Epitaxial (111) MgO films were prepared on (0001) Al{sub x}Ga{sub 1−x}N via molecular-beam epitaxy for x = 0 to x = 0.67. Valence band offsets of MgO to Al{sub x}Ga{sub 1−x}N were measured using X-ray photoelectron spectroscopy as 1.65 ± 0.07 eV, 1.36 ± 0.05 eV, and 1.05 ± 0.09 eV for x = 0, 0.28, and 0.67, respectively. This yielded conduction band offsets of 2.75 eV, 2.39 eV, and 1.63 eV for x = 0, 0.28, and 0.67, respectively. All band offsets measured between MgO and Al{sub x}Ga{sub 1−x}N provide a > 1 eV barrier height to the semiconductor.
Authors:
; ; ; ; ; ; ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Publication Date:
OSTI Identifier:
22482033
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; EV RANGE; FILMS; MAGNESIUM OXIDES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY; YIELDS