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Title: n-ZnO/p-4H-SiC diode: Structural, electrical, and photoresponse characteristics

Epitaxial n-type ZnO film has been grown, on a commercial 5 μm thick p-type 4H-SiC(00.1) Al doped epilayer, by atomic layer deposition. A full width at half maximum of the ZnO 00.2 diffraction peak rocking curve of 0.34°{sup  }± 0.02° has been measured. Diodes formed on the n-ZnO/p-4H-SiC heterostructure show rectifying behavior with a forward to reverse current ratio at the level of 10{sup 9} at ±4 V, a leakage current density of ∼6 × 10{sup −8} A/cm{sup 2}, and a low ideality factor equal to 1.17 ± 0.04. In addition, the diodes exhibit selective photoresponse with a maximum at 367 nm, and with a current increase of ∼10{sup 3} under illuminations with respect to the dark value, which makes such devices prospective candidates for ultraviolet light sensors.
Authors:
;  [1] ; ; ; ; ;  [2]
  1. Institute of Electron Technology, Al. Lotników 32/46 PL-02-668 Warsaw (Poland)
  2. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46 PL-02-668 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22482022
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DENSITY; DOPED MATERIALS; EPITAXY; FILMS; LEAKAGE CURRENT; NEUTRON DIFFRACTION; PEAKS; SENSORS; SILICON CARBIDES; ULTRAVIOLET RADIATION; ZINC OXIDES