Tunnel junction enhanced nanowire ultraviolet light emitting diodes

May, Brelon J.; Deitz, Julia I.; Grassman, Tyler J.; McComb, David W.; Myers, Roberto C.

doi:10.1063/1.4930593

Title: Tunnel junction enhanced nanowire ultraviolet light emitting diodes

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Abstract

Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6 V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 μW of UV emission at ∼310 nm is measured with external quantum efficiency in the range of 4–6 m%. The realization of tunnel junction within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.

Authors:

May, Brelon J.; Deitz, Julia I.; Grassman, Tyler J.; McComb, David W. ^[1]; Myers, Roberto C. ^[2]

Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

Publication Date:: Mon Sep 07 00:00:00 EDT 2015

OSTI Identifier:: 22482021

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 107; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; ELECTRIC POTENTIAL; LIGHT EMITTING DIODES; NANOWIRES; POLARIZATION; QUANTUM EFFICIENCY; TUNNEL EFFECT; ULTRAVIOLET RADIATION

Citation Formats


                    Sarwar, A. T. M. Golam, May, Brelon J., Deitz, Julia I., Grassman, Tyler J., McComb, David W., Myers, Roberto C., and Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210. Tunnel junction enhanced nanowire ultraviolet light emitting diodes.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4930593.

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                    Sarwar, A. T. M. Golam, May, Brelon J., Deitz, Julia I., Grassman, Tyler J., McComb, David W., Myers, Roberto C., & Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210. Tunnel junction enhanced nanowire ultraviolet light emitting diodes.  United States.  https://doi.org/10.1063/1.4930593

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                    Sarwar, A. T. M. Golam, May, Brelon J., Deitz, Julia I., Grassman, Tyler J., McComb, David W., Myers, Roberto C., and Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210. 2015.  
        "Tunnel junction enhanced nanowire ultraviolet light emitting diodes".  United States.  https://doi.org/10.1063/1.4930593.

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@article{osti_22482021,

  title        = {Tunnel junction enhanced nanowire ultraviolet light emitting diodes},

  author       = {Sarwar, A. T. M. Golam and May, Brelon J. and Deitz, Julia I. and Grassman, Tyler J. and McComb, David W. and Myers, Roberto C. and Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210},

  abstractNote = {Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6 V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 μW of UV emission at ∼310 nm is measured with external quantum efficiency in the range of 4–6 m%. The realization of tunnel junction within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.},

  doi          = {10.1063/1.4930593},

  url          = {https://www.osti.gov/biblio/22482021},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 10,

  volume       = 107,

  place        = {United States},

  year         = {Mon Sep 07 00:00:00 EDT 2015},

  month        = {Mon Sep 07 00:00:00 EDT 2015}

}

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