skip to main content

Title: III-V/Si wafer bonding using transparent, conductive oxide interlayers

We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm{sup 2} for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga{sub 0.5}In{sub 0.5}P/Si tandem solar cells operating at 1 sun or low concentration conditions.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. National Center for Photovoltaics, National Renewable Energy Laboratory, 15013 Denver West Pkwy, Golden, Colorado 80401 (United States)
  2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States)
Publication Date:
OSTI Identifier:
22482018
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 26; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ABUNDANCE; BONDING; INDIUM; LAYERS; MATERIALS; PLASMA; SOLAR CELLS; TEMPERATURE RANGE 0065-0273 K; TRANSMISSION; VISIBLE RADIATION; ZINC OXIDES