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Title: Space-and-time-resolved spectroscopy of single GaN nanowires

Gallium nitride nanowires have garnered much attention in recent years due to their attractive optical and electrical properties. An understanding of carrier transport, relaxation, and recombination in these quasi-one-dimensional nanosystems is therefore important in optimizing them for various applications. Here, we present ultrafast optical microscopic measurements on single GaN nanowires. Our experiments, performed while varying the light polarization, excitation fluence, and position, give insight into the mechanisms governing carrier dynamics in these nanosystems.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ; ; ;  [3] ; ;  [1]
  1. Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  2. (India)
  3. Sandia National Laboratories, P.O. Box 5800, MS-1086, Albuquerque, New Mexico 87185 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22482017
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 26; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIERS; ELECTRICAL PROPERTIES; EXCITATION; GALLIUM NITRIDES; NANOWIRES; POLARIZATION; RECOMBINATION; RELAXATION; SPECTROSCOPY; TIME RESOLUTION