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Title: Strain mapping at nanometer resolution using advanced nano-beam electron diffraction

We report on the development of a nanometer scale strain mapping technique by means of scanning nano-beam electron diffraction. Only recently possible due to fast acquisition with a direct electron detector, this technique allows for strain mapping with a high precision of 0.1% at a lateral resolution of 1 nm for a large field of view reaching up to 1 μm. We demonstrate its application to a technologically relevant strain-engineered GaAs/GaAsP hetero-structure and show that the method can even be applied to highly defected regions with substantial changes in local crystal orientation. Strain maps derived from atomically resolved scanning transmission electron microscopy images were used to validate the accuracy, precision and resolution of this versatile technique.
Authors:
; ; ;  [1] ;  [1] ;  [2] ;  [3] ;  [4] ;  [1] ;  [2]
  1. National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  2. (United States)
  3. (Austria)
  4. Institute for Advanced Research, Nagoya University, Nagoya 464-8603 (Japan)
Publication Date:
OSTI Identifier:
22482015
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 25; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ACCURACY; BEAMS; CRYSTALS; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; MAPPING; ORIENTATION; RESOLUTION; STRAINS; TRANSMISSION ELECTRON MICROSCOPY