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Title: Epitaxial Cu{sub 2}ZnSnS{sub 4} thin film on Si (111) 4° substrate

To explore the possibility of Cu{sub 2}ZnSnS{sub 4} (CZTS)/Si based tandem solar cells, the heteroepitaxy of tetragonal Cu{sub 2}ZnSnS{sub 4} thin films on single crystalline cubic Si (111) wafers with 4° miscut is obtained by molecular beam epitaxy. The X-ray θ-2θ scan and selected area diffraction patterns of the CZTS thin films and Si substrates, and the high resolution transmission electron microscopy image of the CZTS/Si interface region demonstrate that the CZTS thin films are epitaxially grown on the Si substrates. A CZTS/Si P-N junction is formed and shows photovoltaic responses, indicating the promising application of epitaxial CZTS thin films on Si.
Authors:
; ; ; ;  [1] ; ; ; ;  [2] ;  [3]
  1. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)
  2. National Renewable Energy Laboratory, Golden, Colorado 80403 (United States)
  3. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
Publication Date:
OSTI Identifier:
22482012
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 25; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DIFFRACTION; IMAGES; INTERFACES; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; PHOTOVOLTAIC EFFECT; P-N JUNCTIONS; RESOLUTION; SOLAR CELLS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION