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Title: Large-area SiC membrane produced by plasma enhanced chemical vapor deposition at relatively high temperature

Advances in the growth of silicon carbide (SiC) thin films with outstanding thermal and mechanical properties have received considerable attention. However, the fabrication of large-area free-standing SiC membrane still remains a challenge. Here, the authors report a plasma enhanced chemical vapor deposition process at a relatively high temperature to improve the free-standing SiC membrane area. A systematic study on the microstructural, mechanical, and optical properties of hydrogenated polycrystalline silicon carbide (poly-SiC{sub x}:H) thin films deposited at 600 °C with different annealing temperatures has been performed. In the as-deposited state, SiC{sub x}:H thin films show a polycrystalline structure. The crystallinity degree can be further improved with the increase of the postdeposition annealing temperature. The resulting process produced free-standing 2-μm-thick SiC membranes up to 70 mm in diameter with root mean square roughness of 3.384 nm and optical transparency of about 70% at 632.8 nm wavelength. The large-area SiC membranes made out of poly-SiC{sub x}:H thin films deposited at a relatively high temperature can be beneficial for a wide variety of applications, such as x-ray diffractive optical elements, optical and mechanical filtering, lithography mask, lightweight space telescopes, etc.
Authors:
;  [1]
  1. Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)
Publication Date:
OSTI Identifier:
22479718
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 5; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CHEMICAL VAPOR DEPOSITION; DEPOSITS; FABRICATION; HYDROGENATION; MECHANICAL FILTERS; MEMBRANES; MICROSTRUCTURE; OPACITY; PLASMA; POLYCRYSTALS; SILICON CARBIDES; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; WAVELENGTHS; X RADIATION