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Title: Observation of ultraslow stress release in silicon nitride films on CaF{sub 2}

Silicon nitride thin films are deposited by plasma-enhanced chemical vapor deposition on (100) and (111) CaF{sub 2} crystalline substrates. Delaminated wavy buckles formed during the release of internal compressive stress in the films and the stress releasing processes are observed macroscopically and microscopically. The stress release patterns start from the substrate edges and propagate to the center along defined directions aligned with the crystallographic orientations of the substrate. The stress releasing velocity of SiN{sub x} film on (111) CaF{sub 2} is larger than that of SiN{sub x} film with the same thickness on (100) CaF{sub 2}. The velocities of SiN{sub x} film on both (100) and (111) CaF{sub 2} increase with the film thickness. The stress releasing process is initiated when the films are exposed to atmosphere, but it is not a chemical change from x-ray photoelectron spectroscopy.
Authors:
 [1] ;  [2] ; ;  [3] ;  [4] ;  [5]
  1. School of Biomedical Engineering, McMaster University, 1280 Main St W, Hamilton, Ontario L8S 4K1, Canada and Institute of Microelectronics, Chinese Academy of Science, Beijing 100029 (China)
  2. Department of Electrical and Computer Engineering, McMaster University, 1280 Main St W, Hamilton, Ontario L8S 4K1, Canada and School of Biomedical Engineering, McMaster University, 1280 Main St W, Hamilton, Ontario L8S 4K1 (Canada)
  3. Department of Engineering Physics, McMaster University, 1280 Main St W, Hamilton, Ontario L8S 4L7 (Canada)
  4. Department of Mechanical Engineering, McMaster University, 1280 Main St W, Hamilton, Ontario L8S 4L7 (Canada)
  5. Institute of Microelectronics, Chinese Academy of Science, Beijing 100029 (China)
Publication Date:
OSTI Identifier:
22479712
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 4; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; CALCIUM FLUORIDES; CHEMICAL VAPOR DEPOSITION; CRYSTALLOGRAPHY; DEPOSITS; PLASMA; SILICON NITRIDES; STRESSES; SUBSTRATES; THICKNESS; THIN FILMS; VELOCITY; X-RAY PHOTOELECTRON SPECTROSCOPY