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Title: Fabrication of ion conductive tin oxide-phosphate amorphous thin films by atomic layer deposition

This work reports the atomic layer deposition (ALD) of tin oxide-phosphate films using tetrakis(dimethylamino)tin and trimethyl phosphate as precursors. The growth rates were 1.23–1.84 Å/cycle depending upon the deposition temperature and precursor combination. The ionic conductivity of the ALD tin oxide-phosphate films was evaluated by cross-plane impedance measurements in the temperature range of 50–300 °C under atmospheric air, with the highest conductivity measured as 1.92 × 10{sup −5} S cm{sup −1} at 300 °C. Furthermore, high-resolution x-ray photoelectron spectroscopy exhibited two O1s peaks that were classified as two subpeaks of hydroxyl ions and oxygen ions, revealing that the quantity of hydroxyl ions in the ALD tin oxide-phosphate films influences their ionic conductivity.
Authors:
; ; ;  [1]
  1. School of Mechanical Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22479708
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 4; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ANIONS; DEPOSITION; FABRICATION; HYDROXIDES; IMPEDANCE; LAYERS; OXYGEN IONS; PEAKS; PHOSPHATES; PRECURSOR; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TIN OXIDES; X-RAY PHOTOELECTRON SPECTROSCOPY