skip to main content

Title: Study on spatial distribution of plasma parameters in a magnetized inductively coupled plasma

Spatial distributions of various plasma parameters such as plasma density, electron temperature, and radical density in an inductively coupled plasma (ICP) and a magnetized inductively coupled plasma (M-ICP) were investigated and compared. Electron temperature in between the rf window and the substrate holder of M-ICP was higher than that of ICP, whereas the one just above the substrate holder of M-ICP was similar to that of ICP when a weak (<8 G) magnetic field was employed. As a result, radical densities in M-ICP were higher than those in ICP and the etch rate of oxide in M-ICP was faster than that in ICP without severe electron charging in 90 nm high aspect ratio contact hole etch.
Authors:
; ; ;  [1] ;  [2] ;  [3]
  1. Plasma Laboratory, Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)
  2. Samsung Electronics Co., Banwol-dong, Hwaseong 445-701 (Korea, Republic of)
  3. Tokyo Electron Miyagi Ltd., Taiwa-cho, Kurokawa-gun, Miyagi 981-3629 (Japan)
Publication Date:
OSTI Identifier:
22479705
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 4; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; ASPECT RATIO; COMPARATIVE EVALUATIONS; ELECTRON TEMPERATURE; MAGNETIC FIELDS; OXIDES; PLASMA DENSITY; RADICALS; SPATIAL DISTRIBUTION; SUBSTRATES