Influence of oxygen on characteristics of Zn(O,S) thin films deposited by RF magnetron sputtering
Zn(O,S) thin films were successfully deposited by reactive sputtering using Ar and O{sub 2} gas mixtures at 473 K. X-ray diffraction patterns revealed that the well crystallized Zn(O,S) films were deposited with increasing oxygen concentration in O{sub 2}/Ar, resulting in a shift of the Zn peak of 28.5° to a higher angle, closer to the ZnO peak of 34.4°. Zn(O,S) films were composed of grains agglomerated from small particles, which grew gradually with increasing oxygen concentration. The depth profiles and energy dispersive spectroscopy results of the films indicated that the O/(O+S) ratio increased from 0.04 to 0.81, and all Zn(O,S) films were Zn rich with uniform concentrations of each component. X-ray photoelectron spectroscopy revealed that, as the oxygen concentration increased to 2%, the ZnS films were transformed to Zn(O,S) films via substitution of oxygen for sulfur.
- OSTI ID:
- 22479703
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 33, Issue 4; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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