skip to main content

Title: Influence of oxygen on characteristics of Zn(O,S) thin films deposited by RF magnetron sputtering

Zn(O,S) thin films were successfully deposited by reactive sputtering using Ar and O{sub 2} gas mixtures at 473 K. X-ray diffraction patterns revealed that the well crystallized Zn(O,S) films were deposited with increasing oxygen concentration in O{sub 2}/Ar, resulting in a shift of the Zn peak of 28.5° to a higher angle, closer to the ZnO peak of 34.4°. Zn(O,S) films were composed of grains agglomerated from small particles, which grew gradually with increasing oxygen concentration. The depth profiles and energy dispersive spectroscopy results of the films indicated that the O/(O+S) ratio increased from 0.04 to 0.81, and all Zn(O,S) films were Zn rich with uniform concentrations of each component. X-ray photoelectron spectroscopy revealed that, as the oxygen concentration increased to 2%, the ZnS films were transformed to Zn(O,S) films via substitution of oxygen for sulfur.
Authors:
; ; ;  [1]
  1. Department of Chemistry and Chemical Engineering, Center for Design and Applications of Molecular Catalysts, Inha University, 100 Inharo, Nam-Gu, Incheon 402-751 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22479703
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 4; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABUNDANCE; DEPOSITS; MAGNETRONS; OXYGEN; SPUTTERING; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES; ZINC SULFIDES