skip to main content

SciTech ConnectSciTech Connect

Title: Initial stages of growth and the influence of temperature during chemical vapor deposition of sp{sup 2}-BN films

Knowledge of the structural evolution of thin films, starting by the initial stages of growth, is important to control the quality and properties of the film. The authors present a study on the initial stages of growth and the temperature influence on the structural evolution of sp{sup 2} hybridized boron nitride (BN) thin films during chemical vapor deposition (CVD) with triethyl boron and ammonia as precursors. Nucleation of hexagonal BN (h-BN) occurs at 1200 °C on α-Al{sub 2}O{sub 3} with an AlN buffer layer (AlN/α-Al{sub 2}O{sub 3}). At 1500 °C, h-BN grows with a layer-by-layer growth mode on AlN/α-Al{sub 2}O{sub 3} up to ∼4 nm after which the film structure changes to rhombohedral BN (r-BN). Then, r-BN growth proceeds with a mixed layer-by-layer and island growth mode. h-BN does not grow on 6H-SiC substrates; instead, r-BN nucleates and grows directly with a mixed layer-by-layer and island growth mode. These differences may be caused by differences in substrate surface temperature due to different thermal conductivities of the substrate materials. These results add to the understanding of the growth process of sp{sup 2}-BN employing CVD.
Authors:
; ; ;  [1] ;  [2]
  1. Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden)
  2. Institute of Technical Physics and Materials Science, Centre for Energy Research of Hungarian Academy of Sciences, Konkoly-Thege Miklós út 29-33, H-1121 Budapest (Hungary)
Publication Date:
OSTI Identifier:
22479682
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 6; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; AMMONIA; BORON; CHEMICAL VAPOR DEPOSITION; LAYERS; NUCLEATION; PRECURSOR; SILICON CARBIDES; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE; THERMAL CONDUCTIVITY; THIN FILMS; TRIGONAL LATTICES