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Title: Effect of porous morphology on phase transition in vanadium dioxide thin films

Vanadium oxide (VO{sub 2}) thin films were prepared on Si (100) substrates by direct current magnetron sputtering at room temperature, and then, postannealing was conducted at 450 °C for 2 h in vacuum. Structural characterizations demonstrated that the thin films exhibited porous morphology upon thermal annealing and the porosity and pore size depended on the oxygen flow rate in the process of film fabrication. Raman spectra were measured in the temperature range of 303–343 K, and resistance measurement was conducted in the temperature range of 293–363 K, to study the influence of porous morphology on the phase transition in VO{sub 2} thin films. It was illustrated that the porous morphology could provide a free space to release the stress induced in the monoclinic-to-tetragonal phase transition of VO{sub 2}, and lower the transition temperature to a certain degree.
Authors:
;  [1] ; ;  [2] ;  [3]
  1. State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi (China)
  2. College of Physics and Information Technology, Shaanxi Normal University, Xi'an 710062, Shaanxi (China)
  3. State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, China and Department of Physics and Opt-Electronic Engineering, Xi'an University of Arts and Science, Xi'an 710065, Shaanxi (China)
Publication Date:
OSTI Identifier:
22479675
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 6; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; ANNEALING; DIRECT CURRENT; FABRICATION; FLOW RATE; MAGNETRONS; MONOCLINIC LATTICES; MORPHOLOGY; PHASE TRANSFORMATIONS; POROSITY; POROUS MATERIALS; RAMAN SPECTRA; SPACE; SPUTTERING; STRESSES; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; VANADIUM OXIDES