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Title: Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

Highlights: • High quality ZnO thin films grown on different p-Si substrates were successful obtained by sol–gel process. • PL measurement revealed that ZnO thin film grown on porous Si has the better optical quality. • I–V characteristics for all heterojunctions exhibit successful diode formation. • The diode ZnO/PSi shows a better photovoltaic effect under illumination with a maximum {sub Voc} of 0.2 V. - Abstract: In this study, ZnO thin films are deposited by sol–gel technique on p-type crystalline silicon (Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed that the obtained thin films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented along the c-axis direction. Morphological study revealed the presence of rounded and facetted grains irregularly distributed on the surface of all samples. PL spectra at room temperature revealed that ZnO thin film grown on porous Si has a strong UV emission with low defects in the visible region comparing with ZnO grown on plat Si and etched Si surface. The heterojunction parameters were evaluated from the (I–V) under dark and illumination at room temperature. The ideality factor, barrier height and series resistance of heterojunction grown on different p-Si substrates are determinedmore » by using different methods. Best electrical properties are obtained for ZnO layer deposited on porous silicon.« less
Authors:
 [1] ;  [1] ;  [2] ;  [3] ; ;  [4] ;
  1. Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia)
  2. (Tunisia)
  3. Laboratoire de Microélectronique et Instrumentation, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’environnement, 5019 Monastir (Tunisia)
  4. Laboratoire Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l'environnement, 5019 Monastir (Tunisia)
Publication Date:
OSTI Identifier:
22475957
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 70; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEFECTS; DIFFUSION BARRIERS; ELECTRICAL PROPERTIES; EMISSION; HETEROJUNCTIONS; ILLUMINANCE; LAYERS; NANOSTRUCTURES; PHOTOVOLTAIC EFFECT; POLYCRYSTALS; POROUS MATERIALS; P-TYPE CONDUCTORS; SEMICONDUCTOR DIODES; SILICON; SPECTRA; SPIN-ON COATING; SUBSTRATES; SURFACES; THIN FILMS; ZINC OXIDES