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Title: Control of gallium incorporation in sol–gel derived CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin films for photovoltaic applications

Highlights: • CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin films were prepared by sol–gel process. • Evolution of lattice parameters is characteristic of a solid solution. • Optical band gap was found to be linearly dependent on the gallium rate. - Abstract: In this paper, we report the elaboration of Cu(In,Ga)S{sub 2} chalcopyrite thin films via a sol–gel process. To reach this aim, solutions containing copper, indium and gallium complexes were prepared. These solutions were thereafter spin-coated onto the soda lime glass substrates and calcined, leading to metallic oxides thin films. Expected chalcopyrite films were finally obtained by sulfurization of oxides layers using a sulfur atmosphere at 500 °C. The rate of gallium incorporation was studied both at the solutions synthesis step and at the thin films sulfurization process. Elemental and X-ray diffraction (XRD) analyses have shown the efficiency of monoethanolamine used as a complexing agent for the preparation of CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin layers. Moreover, the replacement of diethanolamine by monoethanolamine has permitted the substitution of indium by isovalent gallium from x = 0 to x = 0.4 and prevented the precipitation of copper derivatives. XRD analyses of sulfurized thin films CuIn{sub (1−x)}Ga{sub x}S{sub 2,} clearly indicated that the increasingmore » rate of gallium induced a shift of XRD peaks, revealing an evolution of the lattice parameter in the chalcopyrite structure. These results were confirmed by Raman analyses. Moreover, the optical band gap was also found to be linearly dependent upon the gallium rate incorporated within the thin films: it varies from 1.47 eV for x = 0 to 1.63 eV for x = 0.4.« less
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [2] ;  [3] ;
  1. Institut de Recherche sur les Composants logiciels et matériels pour l’Information et la Communication Avancée (IRCICA), CNRS USR 3380, Université Lille 1, 50 avenue Halley, 59655 Villeneuve d’Ascq CEDEX (France)
  2. (PhLAM), CNRS UMR 8523, Université Lille, 59655 Villeneuve d’Ascq CEDEX (France)
  3. (IEMN), CNRS UMR 8520, Avenue Poincaré, 59652 Villeneuve d’Ascq CEDEX (France)
Publication Date:
OSTI Identifier:
22475896
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 70; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHALCOPYRITE; CHELATING AGENTS; COPPER COMPOUNDS; EFFICIENCY; GALLIUM ADDITIONS; GALLIUM COMPOUNDS; GLASS; INDIUM COMPOUNDS; LATTICE PARAMETERS; LAYERS; OPTICAL PROPERTIES; OXIDES; PHOTOVOLTAIC EFFECT; PRECIPITATION; SODIUM CARBONATES; SOL-GEL PROCESS; SOLID SOLUTIONS; SULFUR COMPOUNDS; THIN FILMS; X-RAY DIFFRACTION