Anti-adhesive characteristics of CHF{sub 3}/O{sub 2} and C{sub 4}F{sub 8}/O{sub 2} plasma-modified silicon molds for nanoimprint lithography
- Department of Control and Instrumentation Engineering, Korea University, Sejong 339-700 (Korea, Republic of)
- Department of Electronics, Hanseo University, Seosan 356-706 (Korea, Republic of)
The anti-adhesive characteristics of a plasma-modified silicon mold surface for nanoimprint lithography are presented. Both CHF{sub 3}/O{sub 2} and C{sub 4}F{sub 8}/O{sub 2} plasma were used to form an anti-adhesive layer on silicon mold surfaces. The gas mixing ratios of CHF{sub 3}/O{sub 2} and C{sub 4}F{sub 8}/O{sub 2} were experimentally changed between 0% and 80% to optimize the plasma conditions to obtain a low surface energy of the silicon mold. The plasma characteristics were examined by optical emission spectroscopy (OES). In order to investigate the changes in surface energy and surface chemistry of the anti-adhesive layer during repeated demolding cycles, contact angle measurements and X-ray photoelectron spectroscopy (XPS) were performed on the plasma-modified silicon mold surface. Simultaneously, the surface morphology of the demolded resists was evaluated by field-emission scanning electron microscope (FE-SEM) in order to examine the effect of the anti-adhesive layers on the duplicated patterns of the resists. It was observed that the anti-adhesive layer formed by CHF{sub 3}/O{sub 2} plasma treatment was worn out more easily during repeated demolding cycles than the film formed by C{sub 4}F{sub 8}/O{sub 2} plasma treatment, because CHF{sub 3}/O{sub 2} gas plasma formed a thinner plasma-polymerized film over the same plasma treatment time.
- OSTI ID:
- 22475879
- Journal Information:
- Materials Research Bulletin, Vol. 69; Conference: ISFM 2014: 6. international symposium on functional materials, Singapore (Singapore), 4-7 Aug 2014; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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