Optical and structural properties of sputtered CdS films for thin film solar cell applications
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746 (Korea, Republic of)
- High-Speed Railroad Infrastructure System Research Team, Korea Railroad Research Institute, Uiwang 437-757 (Korea, Republic of)
- Water Facility Research Center, K-water, 125, 1689 Beon-gil, Yuseong-daero, Yuseong-gu, Daejeon 305-730 (Korea, Republic of)
- Department of Photoelectronics Information, Chosun College of Science and Technology, Gwangju (Korea, Republic of)
Graphical abstract: Photo current–voltage curves (a) and the quantum efficiency (QE) (b) for the solar cell with CdS film grown at 300 °C. - Highlights: • CdS thin films were grown by a RF magnetron sputtering method. • Influence of growth temperature on the properties of CdS films was investigated. • At higher T{sub g}, the crystallinity of the films improved and the grains enlarged. • CdS/CdTe solar cells with efficiencies of 9.41% were prepared at 300 °C. - Abstract: CdS thin films were prepared by radio frequency magnetron sputtering at various temperatures. The effects of growth temperature on crystallinity, surface morphology and optical properties of the films were characterized with X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectra, UV–visible spectrophotometry, and photoluminescence (PL) spectra. As the growth temperature was increased, the crystallinity of the sputtered CdS films was improved and the grains were enlarged. The characteristics of CdS/CdTe thin film solar cell appeared to be significantly influenced by the growth temperature of the CdS films. Thin film CdS/CdTe solar cells with efficiencies of 9.41% were prepared at a growth temperature of 300 °C.
- OSTI ID:
- 22475873
- Journal Information:
- Materials Research Bulletin, Vol. 69; Conference: ISFM 2014: 6. international symposium on functional materials, Singapore (Singapore), 4-7 Aug 2014; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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